Multi-domain multi-level abstraction modelling of integrated power devices

0038-1101/$ see front matter 2009 Elsevier Ltd. A doi:10.1016/j.sse.2009.08.004 * Corresponding author. Address: University of Nott 2RD Nottingham, UK. Tel.: +44 (0) 115 951 5568; fax E-mail addresses: [email protected] iis.ee.ethz.ch (M. Ciappa). 1 ETZ HJ81, Gloriastr. 35, 8092 Zurich, Switzerland. T 44 632 1194. To satisfy the design and optimization needs of increasing power device structural and functional integration, novel simulation approaches need to be considered. In particular, the availability of a unified platform enabling multi-physical-domain analysis and multi-level abstraction is paramount to ensure sufficient flexibility and provide the required insight. Based on VHDL-AMS, this work presents the model development for two integrated power devices, conceived for operation under quite diverse bias conditions and thus exhibiting different criticalities. Simulation results are checked against experimental data to demonstrate the usefulness of the description method considered. The proposed models can be usefully employed in a broad range of investigations, ranging from development activities to reliability investigation. 2009 Elsevier Ltd. All rights reserved.